Japanese semiconductor giant ROHM has forayed into the Indian electric vehicle market with it’s low power and energy efficient power supplies to meet the growing demand for Electric and other Hybrid-Electric-Vehicles.
ROHM ventured into India in 2006with a representative office, followed it up by establishing a fully owned subsidiary in 2011. In 2014, an R&D center was established in Bangalore to support Indian customers.
Nakamura, Managing Director, ROHM Semiconductor India. said, “Combined with the years of experience from the global markets, and a strong local sales and support organization, we are all set to play a vital role in the Indian Electric Vehicle revolution.”
“Advanced Driver Assistance System (ADAS) is working towards reducing the accidents due to human errors. Indian Automotive consumers will be benefitted from adopting some, if not all of the ADAS systems, like pedestrian avoidance, obstruction detection, automatic parking, etc. Besides, the number of electric motors in an automotive is steadily increasing, along with the electronics needed for the control. ROHM is working with some of the key enablers of some of these technologies to supply highly efficient semiconductor devices, said, “ Britto Edward, Head, Design Center, India.
ROHM also announced the availability of new power supply IC based on Nano Pulse Control Technology for the Indian market a 2MHz switching regulator with built-in MOSFET that achieves the highest step-down ratio in the industry. This is required for 48V automotive systems such as mild hybrid vehicles.
The latest switching regulator (BD9V100MUF-C) from ROHM, utilizes proprietary technology to reduce the minimum ON time to an unprecedented 9ns which is 10x shorter than the existing technology, thus enabling step-down operation from high input voltages like 60V to around 2.5V, at a constant frequency of 2MHz.
It is very much useful in the new Automotive, Industrial & Solar energy segments. In addition, current-mode control provides easy phase compensation and use fewer external parts, while the integrated high-voltage MOSFET expands the input voltage range to 65V enabling wide adoption.